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17/02/2022 - Ralph MAKHOUL

by Laurent Krähenbühl - published on , updated on


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Xiaokang Zhang defends his PhD on Feb. 17, 2022 (10 AM).
Place : INSA de Lyon, amphithéâtre AE1 du bâtiment Gustave Ferrié, 8 rue de la Physique.

High voltage (6kV) diamond TMBS diode design

Jury :

  • GODIGNON Philippe, Professeur, CNM-IMB, Rapporteur
  • BEYDOUN Bilal, Professeur, CESI Nanterre, Rapporteur
  • ACHARD Jocelyn, Professeur, LSPM, Examinateur
  • TASSELLI Josiane, Chargée de recherche du CNRS, LAAS-CNRS, Examinatrice
  • PLANSON Dominique, Professeur, INSA Lyon, Directeur de thèse
  • ISOIRD Karine, Maître de Conférences, LAAS-CNRS, Co-directrice de thèse
  • PHUNG Luong Viêt, Maître de Conférences, INSA Lyon, Co-directeur de thèse

Abstract :
The increase of the world electrical consumption requires the improvement of power devices. Until now, most of these devices, mainly made of Silicon, have reached a saturation point in terms of compromise between voltage holding capability and on-state resistance. Thus, the promising intrinsic physical properties of wide bandgap semiconductors (SiC, GaN, Diamond) open the way to the realization of more efficient power electronic components. In this context, our work focuses on the design and realization of a vertical TMBS (Trench MOS Barrier Schottky) diode and a vertical P-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a diamond U-gate that can withstand 6000 V and 1200 V respectively at room temperature. These two structures have been designed in the framework of the ANR project MOVeToDIAM (MOS Vertical Tout DIAMant), coordinated by LAAS-CNRS, in the continuity of the work on diamond carried out in the laboratory since 2005. The design of the TMBS diode and the MOSFET transistor is realized with the SENTAURUS TCAD (Technology Computer Aided Design) software. A design methodology is adapted for these two structures to achieve the desired operating criteria. Finally, essential technological bricks have been developed to realize the TMBS diode and the MOSFET transistor. First, ohmic contacts on P-type diamond samples have been realized, then electrically characterized using the right TLM (Transmission Line Method) patterns. Then, a RIE-ICP (Reactive Ion Etching - Inductive Coupled Plasma) dry etching process was developed to obtain the realization of the MESA structure of the TMBS diode and also for the opening of the U-gate of the MOSFET. Finally, a deposition of different dielectrics (SiO2, Si3N4 and Al2O3) on diamond samples has been performed in order to evaluate the quality of the dielectric deposition.

Keywords :
Power devices, TMBS diode, MOSFET transistor, design methodology, technology bricks, ohmic contact, RIE-ICP etching

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