Arthur Boutry defends his PhD on Dec. 16, 2021 at 2:00 PM.
Place : visio only
Theoretical and experimental evaluation of the Integrated gate-commutated thyristor (IGCT) as a switch for Modular Multi Level Converters (MMC).
Jury :
Reviewers : Dieckerhoff Sibylle (Univ. Technique Berlin), Dujic Drazen (EPFL)
Examiners : Ladoux Philippe (Univ. Toulouse), Batut Nathalie (Univ. Tours)
Supervisors (Laboratoire Ampère) : Buttay Cyril (INSA Lyon), Vagnon Eric (ECL)
Abstract :
A study on Integrated gate-commutated thyristors (IGCT) di/dt limiting inductance and RCD-clamp reduction/suppression using plastic module silicon (Si) fast recovery diodes and silicon carbide (SiC) diodes, in Modular Multilevel Converters (MMC). This PhD contains:
- Analysis of existing HVDC MMC Submodules.
- Assessment of the interest of the IGCT in HVDC MMC Submodules and losses comparison with IGBTs, using MMC-specific figures-of-merit created in this thesis.
- Double pulse test with fast recovery diode in plastic module to attempt to reduce and suppress the limiting di/dt inductor.
- Packaging of High-Voltage High-Current SiC PiN diode dies, test with IGCT in the same setup to attempt to reduce and suppress the limiting di/dt inductor and analyze the specificities of the SiC diode in this setup.
Keywords : power electronics, HVDC, MMC, IGCT, diode, submodule, silicon, silicon carbide, semiconductor